Invention Grant
US07847329B2 Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
有权
垂直MOSFET晶体管，特别是用作非易失性存储器件中的选择器
- Patent Title: Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
- Patent Title (中): 垂直MOSFET晶体管，特别是用作非易失性存储器件中的选择器
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Application No.: US11411982Application Date: 2006-04-26
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Publication No.: US07847329B2Publication Date: 2010-12-07
- Inventor: Fabio Pellizzer , Agostino Pirovano
- Applicant: Fabio Pellizzer , Agostino Pirovano
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: EP05425261 20050427
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region.
Public/Granted literature
- US20060278921A1 Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices Public/Granted day:2006-12-14
Information query
IPC分类:
