Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11984723Application Date: 2007-11-21
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Publication No.: US07847319B2Publication Date: 2010-12-07
- Inventor: Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
- Applicant: Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-013395 20030122
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
Abstract:
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.
Public/Granted literature
- US20080083933A1 Semiconductor device and method for fabricating the same Public/Granted day:2008-04-10
Information query
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