Invention Grant
US07847280B2 Nonpolar III-nitride light emitting diodes with long wavelength emission
有权
具有长波长发射的非极性III族氮化物发光二极管
- Patent Title: Nonpolar III-nitride light emitting diodes with long wavelength emission
- Patent Title (中): 具有长波长发射的非极性III族氮化物发光二极管
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Application No.: US12189038Application Date: 2008-08-08
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Publication No.: US07847280B2Publication Date: 2010-12-07
- Inventor: Hisashi Yamada , Kenji Iso , Shuji Nakamura
- Applicant: Hisashi Yamada , Kenji Iso , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
Public/Granted literature
- US20090039339A1 NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMISSION Public/Granted day:2009-02-12
Information query
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