Invention Grant
US07809913B2 Memory chip for high capacity memory subsystem supporting multiple speed bus
有权
支持多速总线的高容量内存子系统的内存芯片
- Patent Title: Memory chip for high capacity memory subsystem supporting multiple speed bus
- Patent Title (中): 支持多速总线的高容量内存子系统的内存芯片
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Application No.: US11769006Application Date: 2007-06-27
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Publication No.: US07809913B2Publication Date: 2010-10-05
- Inventor: Gerald Keith Bartley , John Michael Borkenhagen , Philip Raymond Germann
- Applicant: Gerald Keith Bartley , John Michael Borkenhagen , Philip Raymond Germann
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Roy W. Truelson
- Main IPC: G06F13/18
- IPC: G06F13/18

Abstract:
A memory module contains an interface for receiving memory access commands from an external source, in which a first portion of the interface receives memory access data at a first bus frequency and a second portion of the interface receives memory access data at a second different bus frequency. Preferably, the memory module contains a second interface for re-transmitting memory access data, also operating at dual frequency. The memory module is preferably used in a high-capacity memory subsystem organized in a tree configuration in which data accesses are interleaved. Preferably, the memory module has multiple-mode operation, one of which supports dual-speed buses for receiving and re-transmitting different parts of data access commands, and another of which supports conventional daisy-chaining.
Public/Granted literature
- US20090006715A1 Memory Chip for High Capacity Memory Subsystem Supporting Multiple Speed Bus Public/Granted day:2009-01-01
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