Invention Grant
- Patent Title: Lens for reforming light-emitting diode radiation
- Patent Title (中): 用于重整发光二极管辐射的透镜
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Application No.: US11639511Application Date: 2006-12-14
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Publication No.: US07809237B2Publication Date: 2010-10-05
- Inventor: Vadim Viktorovich Pozdnyakov , Maxim Evgein'evich Frolov , Alexey Mikhailovich Khorokhorov , Alexander Fedorovich Shirankov , Ju-Young Yoon , Gi-Cherl Kim
- Applicant: Vadim Viktorovich Pozdnyakov , Maxim Evgein'evich Frolov , Alexey Mikhailovich Khorokhorov , Alexander Fedorovich Shirankov , Ju-Young Yoon , Gi-Cherl Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: RU2005139144 20051215
- Main IPC: G02B6/10
- IPC: G02B6/10
Abstract:
A lens for reforming radiation from a light-emitting diode having a first convex surface for admitting radiation path from the light-emitting diode that is close to the axis of the diode and a cylindrical surface for admitting radiation that makes a wider angle with the axis of the diode, a conical surface disposed to receive and totally internally reflect radiation admitted by said convex surface and re-radiate it at an angle substantially normal to the axis of the diode and a curved surface for receiving and re-radiating at an angle substantially normal to the axis of the diode radiation admitted by the cylindrical surface.
Public/Granted literature
- US20070183736A1 Lens for reforming light-emitting diode radiation Public/Granted day:2007-08-09
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