Invention Grant
- Patent Title: Nonvolatile memory devices and methods of controlling the wordline voltage of the same
- Patent Title (中): 非易失性存储器件和控制其字线电压的方法
-
Application No.: US12185548Application Date: 2008-08-04
-
Publication No.: US07808838B2Publication Date: 2010-10-05
- Inventor: Min-Su Kim , Hyung-Gon Kim
- Applicant: Min-Su Kim , Hyung-Gon Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2004-0095862 20041122
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/06
Abstract:
A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.
Public/Granted literature
- US20080291734A1 NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING THE WORDLINE VOLTAGE OF THE SAME Public/Granted day:2008-11-27
Information query
