Invention Grant
- Patent Title: Non-volatile memory device and method of programming the same
- Patent Title (中): 非易失性存储器件及其编程方法相同
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Application No.: US12163866Application Date: 2008-06-27
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Publication No.: US07808825B2Publication Date: 2010-10-05
- Inventor: Won Sun Park
- Applicant: Won Sun Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0136301 20071224
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
When performing a program operation, a non-volatile memory device comprising a multi-plane performs a cache write operation by employing a page buffer circuit of a plane that does not perform the program operation. A data line mux transfers an externally input first data to a page buffer unit of a plane, which will be programmed, according to a plane select signal, transfers a second data to a page buffer unit of a plane on which a program operation is not performed, while the program of the selected plane is performed, and after the first data is programmed, provides a data transfer path between one page buffer unit and the other page buffer unit according to a data transfer control signal.
Public/Granted literature
- US20090161435A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME Public/Granted day:2009-06-25
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