Invention Grant
- Patent Title: RFID tag with redundant non-volatile memory cell
- Patent Title (中): RFID标签与冗余非易失性存储单元
-
Application No.: US12020522Application Date: 2008-01-26
-
Publication No.: US07808823B2Publication Date: 2010-10-05
- Inventor: Yanjun Ma , William T. Colleran , Vadim Gutnik
- Applicant: Yanjun Ma , William T. Colleran , Vadim Gutnik
- Applicant Address: US CA Fremont
- Assignee: Virage Logic Corporation
- Current Assignee: Virage Logic Corporation
- Current Assignee Address: US CA Fremont
- Agency: Nixon Peabody LLP
- Agent David B. Ritchie
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
Two floating gate devices are arranged in a redundant configuration in a non-volatile memory (NVM) of a Radio Frequency Identification (RFID) tag such that stress induced leakage current (SILC) or other failures do not result in a complete loss of memory storage. The redundant NVM may be arranged as a series configuration, a parallel configuration, a single-ended device, a differential device, a simple logic circuit function, and/or a complex logic circuit function.
Public/Granted literature
- US20080136602A1 RFID TAG WITH REDUNDANT NON-VOLATILE MEMORY CELL Public/Granted day:2008-06-12
Information query