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US07808823B2 RFID tag with redundant non-volatile memory cell 有权
RFID标签与冗余非易失性存储单元

RFID tag with redundant non-volatile memory cell
Abstract:
Two floating gate devices are arranged in a redundant configuration in a non-volatile memory (NVM) of a Radio Frequency Identification (RFID) tag such that stress induced leakage current (SILC) or other failures do not result in a complete loss of memory storage. The redundant NVM may be arranged as a series configuration, a parallel configuration, a single-ended device, a differential device, a simple logic circuit function, and/or a complex logic circuit function.
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