The magnetization state of a ferromagnetic material is controlled by applying a current pulse to it while externally applying a weak magnetic field to it. The magnetic state of a ferromagnetic material can be switched between a uniformly magnetized state and a multiple magnetic domain structure by controlling the direction and intensity of the magnetic field applied to it and the intensity and pulse width of the current pulse. When an external magnetic field is applied, the possibility of occurrence of the reversal of the magnetic state upon application of the current pulse shows a hysteresis, and the reversal of the magnetic state can be controlled reliably. The intensity of the magnetic field to be applied may be as weak as a few gauss. Furthermore, by using such magnetic information recording elements, a magnetic information recording device (memory) that can achieve a high degree of integration can be produced.