There is provided a magnetic memory device capable of reading information even with a lower power supply voltage.The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.