Invention Grant
- Patent Title: Microelectronic substrate including embedded components and spacer layer and method of forming same
- Patent Title (中): 微电子基板包括嵌入式元件和间隔层及其形成方法
-
Application No.: US11609297Application Date: 2006-12-11
-
Publication No.: US07808797B2Publication Date: 2010-10-05
- Inventor: Islam Salama , Huankiat Seh
- Applicant: Islam Salama , Huankiat Seh
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H05K1/18
- IPC: H05K1/18

Abstract:
A microelectronic substrate, a method of forming the same, and a system including the same. The microelectronic substrate comprises: a conductive layer; a spacer layer disposed onto the conductive dielectric layer; a dielectric build-up layer disposed onto the spacer layer, the spacer layer being made of a material that has a lower shrinkage than a material of the embedding dielectric-build-up layer during curing, and a higher viscosity than a material of the embedding dielectric build-up layer in its pre-cure form and during curing; and active or passive microelectronic components embedded within the dielectric build-up layer.
Public/Granted literature
- US20080137314A1 MICROELECTRONIC SUBSTRATE INCLUDING EMBEDDED COMPONENTS AND SPACER LAYER AND METHOD OF FORMING SAME Public/Granted day:2008-06-12
Information query