Invention Grant
- Patent Title: Dielectric device and method of manufacturing the same
- Patent Title (中): 电介质器件及其制造方法
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Application No.: US11637709Application Date: 2006-12-13
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Publication No.: US07808769B2Publication Date: 2010-10-05
- Inventor: Tomohiko Katoh , Kenji Horino , Yuko Saya
- Applicant: Tomohiko Katoh , Kenji Horino , Yuko Saya
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JPP2005-366715 20051220; JPP2006-309590 20061115
- Main IPC: H01G4/008
- IPC: H01G4/008

Abstract:
A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.
Public/Granted literature
- US20070138128A1 Dielectric device and method of manufacturing the same Public/Granted day:2007-06-21
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