Invention Grant
- Patent Title: Semiconductor device performing overheat protection efficiently
- Patent Title (中): 半导体装置有效地进行过热保护
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Application No.: US12071037Application Date: 2008-02-14
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Publication No.: US07808762B2Publication Date: 2010-10-05
- Inventor: Kohsuke Inoue
- Applicant: Kohsuke Inoue
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Dickstein Shapiro LLP
- Priority: JP2007-033047 20070214
- Main IPC: H02H5/04
- IPC: H02H5/04
Abstract:
A semiconductor device includes a constant voltage circuit configured to convert an input voltage to a predetermined voltage by controlling an output transistor, and an overheat protection circuit configured to restrict output current of the constant voltage circuit according to temperature of the semiconductor device. The overheat protection circuit includes a diode to detect the temperature of the semiconductor device and a resistor connected in series with the diode.
Public/Granted literature
- US20080192391A1 Semiconductor device performing overheat protection efficiently Public/Granted day:2008-08-14
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