Invention Grant
US07808570B2 Active matrix substrate for display device and its manufacture method
有权
显示器件的有源矩阵基板及其制造方法
- Patent Title: Active matrix substrate for display device and its manufacture method
- Patent Title (中): 显示器件的有源矩阵基板及其制造方法
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Application No.: US10985814Application Date: 2004-11-10
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Publication No.: US07808570B2Publication Date: 2010-10-05
- Inventor: Kazushige Hotta , Takuya Watanabe , Noriyuki Ohashi
- Applicant: Kazushige Hotta , Takuya Watanabe , Noriyuki Ohashi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2004-124973 20040421; JP2004-236393 20040816
- Main IPC: G02F1/136
- IPC: G02F1/136

Abstract:
An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.
Public/Granted literature
- US20050237441A1 Active matrix substrate for display device and its manufacture method Public/Granted day:2005-10-27
Information query
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