A solid-state imaging device includes: a semiconductor substrate on which multiple pixels are provided, each of the pixels having a photoelectric converting section; multiple insulating films stacked on the semiconductor substrate; a wiring film provided between the multiple insulating films; an intralayer lens provided for each photoelectric converting section between the multiple insulating films; an optical filter provided for each photoelectric converting section on the insulating film; and an on-chip lens provided for each photoelectric converting section on the optical filter, wherein at least one intralayer lenses and on-chip lens has a different structure for each pixel in accordance with the characteristic optical filter.