Invention Grant
- Patent Title: Pressure sensor
- Patent Title (中): 压力传感器
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Application No.: US12035000Application Date: 2008-02-21
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Publication No.: US07808365B2Publication Date: 2010-10-05
- Inventor: Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
- Applicant: Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
- Applicant Address: JP Tokyo
- Assignee: Yamatake Corporation
- Current Assignee: Yamatake Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-050822 20070228
- Main IPC: H01C10/10
- IPC: H01C10/10

Abstract:
A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.
Public/Granted literature
- US20080204185A1 PRESSURE SENSOR Public/Granted day:2008-08-28
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