Invention Grant
- Patent Title: Broadband RF linear amplifier
- Patent Title (中): 宽带射频线性放大器
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Application No.: US12263112Application Date: 2008-10-31
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Publication No.: US07808312B2Publication Date: 2010-10-05
- Inventor: Ikuroh Ichitsubo , Brian Michael Wang
- Applicant: Ikuroh Ichitsubo , Brian Michael Wang
- Applicant Address: US CA Palo Alto
- Assignee: Micro Mobio Corporation
- Current Assignee: Micro Mobio Corporation
- Current Assignee Address: US CA Palo Alto
- Agent Xin Wen
- Main IPC: H03G3/20
- IPC: H03G3/20

Abstract:
A broad-band linear amplifier circuit includes a driver amplifier to produce a first amplified radio frequency (RF) signal in a first single RF band in response to a first input RF signal and to produce a second amplified RF signal in a second single RF band in response to a second input RF signal. The first single RF band and the second single RF band reside in a broad band that has a bandwidth more than two times a bandwidth of the first single RF band or the second single RF band. A sensing circuit can sense a power, a gain, or a phase of the first output RF signal and the second output RF signal, and to produce a sensing signal. A gain control circuit controls gain variation of the driver amplifier in response to the sensing signal.
Public/Granted literature
- US20100109778A1 BROADBAND RF LINEAR AMPLIFIER Public/Granted day:2010-05-06
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