Invention Grant
US07808055B2 Methods and apparatus for semiconductor memory devices manufacturable using bulk CMOS process manufacturing
有权
用于半导体存储器件的方法和装置，其使用大容量CMOS工艺制造制造
- Patent Title: Methods and apparatus for semiconductor memory devices manufacturable using bulk CMOS process manufacturing
- Patent Title (中): 用于半导体存储器件的方法和装置，其使用大容量CMOS工艺制造制造
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Application No.: US11766763Application Date: 2007-06-21
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Publication No.: US07808055B2Publication Date: 2010-10-05
- Inventor: Yiming Zhu
- Applicant: Yiming Zhu
- Applicant Address: CN Beijing
- Assignee: GigaDevice Semiconductor Inc.
- Current Assignee: GigaDevice Semiconductor Inc.
- Current Assignee Address: CN Beijing
- Agency: Venture Pacific Law, PC
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The present invention discloses semiconductor devices that can be manufactured utilizing standard process of manufacturing and that can hold information. In accordance with a presently preferred embodiment of the present invention, one or more semiconductor devices can be formed in a well on a substrate where isolation trenches surround one or more devices to create storage regions (floating wells) that is capable of holding a charge. Depending on the charge in the storage region (floating well), it can represent information. The semiconductor devices of the present invention can be manufactured using the standard process of manufacturing (bulk cmos processing).
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