Invention Grant
US07808043B2 Semiconductor device and methods of fabricating the same including forming spacers and etch stop layers with stress properties
有权
半导体器件及其制造方法包括形成具有应力特性的间隔物和蚀刻停止层
- Patent Title: Semiconductor device and methods of fabricating the same including forming spacers and etch stop layers with stress properties
- Patent Title (中): 半导体器件及其制造方法包括形成具有应力特性的间隔物和蚀刻停止层
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Application No.: US11525024Application Date: 2006-09-22
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Publication No.: US07808043B2Publication Date: 2010-10-05
- Inventor: Ki-Chul Kim , Dong-Suk Shin , Yong-Kuk Jeong
- Applicant: Ki-Chul Kim , Dong-Suk Shin , Yong-Kuk Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0002835 20060110
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L21/8238 ; H01L21/4763
Abstract:
A semiconductor device having an etch stop layer and a method of fabricating the same are provided. The semiconductor device may include a substrate and a first gate electrode formed on the substrate. An auxiliary spacer may be formed on the sidewall of the first gate electrode. An etch stop layer may be formed on the substrate having the auxiliary spacer. The etch stop layer and the auxiliary spacer may be formed of a material having a same stress property.
Public/Granted literature
- US20070158704A1 Semiconductor device and methods of fabricating the same Public/Granted day:2007-07-12
Information query
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