Invention Grant
US07808016B2 Heterogeneous integration of low noise amplifiers with power amplifiers or switches
有权
低噪声放大器与功率放大器或开关的非均匀集成
- Patent Title: Heterogeneous integration of low noise amplifiers with power amplifiers or switches
- Patent Title (中): 低噪声放大器与功率放大器或开关的非均匀集成
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Application No.: US11521011Application Date: 2006-09-14
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Publication No.: US07808016B2Publication Date: 2010-10-05
- Inventor: Berinder Brar , Joshua I. Bergman , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
- Applicant: Berinder Brar , Joshua I. Bergman , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
- Applicant Address: US CA Thousand Oaks
- Assignee: Teledyne Licensing, LLC
- Current Assignee: Teledyne Licensing, LLC
- Current Assignee Address: US CA Thousand Oaks
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L31/109
- IPC: H01L31/109
Abstract:
A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate wafer having a first end and a second end, a conducting layer above the first end of the substrate wafer, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.
Public/Granted literature
- US20080067559A1 Heterogeneous integration of low noise amplifiers with power amplifiers or switches Public/Granted day:2008-03-20
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