Invention Grant
- Patent Title: Current detection circuit
- Patent Title (中): 电流检测电路
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Application No.: US12254470Application Date: 2008-10-20
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Publication No.: US07807956B2Publication Date: 2010-10-05
- Inventor: Tatsuya Iwasaki , Koki Tamakawa , Isao Yamamoto
- Applicant: Tatsuya Iwasaki , Koki Tamakawa , Isao Yamamoto
- Applicant Address: JP
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2007-270940 20071018
- Main IPC: H01J40/14
- IPC: H01J40/14

Abstract:
A current detection circuit detects photoelectric current that flows through a phototransistor, and outputs a current, which is proportional to the photoelectric current, via an output terminal. An input-side transistor is a PNP bipolar transistor, and is provided on a current path for the phototransistor. Output-side transistors are PNP bipolar transistors. The base terminals thereof are connected to that of the input-side transistor so as to form a common base terminal, and the emitter terminals thereof are connected to that of the input-side transistor so as to form a common emitter terminal, thereby forming a current mirror circuit. Each of first switches is provided between the collector of the corresponding output-side transistor and an output terminal. Each of second switches is provided between the collector of the corresponding output-side transistor and the ground terminal. A control unit controls the ON/OFF operations of the first switches and the second switches.
Public/Granted literature
- US20090108178A1 CURRENT DETECTION CIRCUIT Public/Granted day:2009-04-30
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