Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US12611088Application Date: 2009-11-02
-
Publication No.: US07807585B2Publication Date: 2010-10-05
- Inventor: Takuya Seino , Manabu Ikemoto , Hiroki Date
- Applicant: Takuya Seino , Manabu Ikemoto , Hiroki Date
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/00
Abstract:
A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.
Public/Granted literature
- US20100075508A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2010-03-25
Information query
IPC分类:
