Invention Grant
US07807584B2 Method of forming metallic oxide films using atomic layer deposition
有权
使用原子层沉积形成金属氧化物膜的方法
- Patent Title: Method of forming metallic oxide films using atomic layer deposition
- Patent Title (中): 使用原子层沉积形成金属氧化物膜的方法
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Application No.: US11812882Application Date: 2007-06-22
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Publication No.: US07807584B2Publication Date: 2010-10-05
- Inventor: Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
- Applicant: Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0070341 20060726
- Main IPC: H01L21/461
- IPC: H01L21/461

Abstract:
Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.
Public/Granted literature
- US20080026596A1 Method of forming metallic oxide films using atomic layer deposition Public/Granted day:2008-01-31
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