Invention Grant
- Patent Title: High aspect ratio via etch
- Patent Title (中): 通过蚀刻的高纵横比
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Application No.: US11782496Application Date: 2007-07-24
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Publication No.: US07807583B2Publication Date: 2010-10-05
- Inventor: Joke Van Aelst , Herbert Struyf , Serge Vanhaelemeersch
- Applicant: Joke Van Aelst , Herbert Struyf , Serge Vanhaelemeersch
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: EP07106361 20070417
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for patterning high aspect ratio vias is provided. More specifically a dry etching method is provided for patterning deep vias or vias with high aspects ratios thereby eliminating the hard mask undercut. A method is provided to create (pattern) deep vias in a substrate for use in three dimensional stacked semiconductor devices and/or structures. More specifically, a method is provided for patterning deep vias with an aspect ratio up to 10 into a Si substrate with smooth via sidewalls and sufficient slope to enable metallization.
Public/Granted literature
- US20080050919A1 HIGH ASPECT RATIO VIA ETCH Public/Granted day:2008-02-28
Information query
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