Invention Grant
- Patent Title: Laser assisted chemical vapor deposition for backside die marking and structures formed thereby
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Application No.: US12284094Application Date: 2008-09-17
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Publication No.: US07807573B2Publication Date: 2010-10-05
- Inventor: Eric Li , Sergei Voronov
- Applicant: Eric Li , Sergei Voronov
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.
Public/Granted literature
- US20100065971A1 Laser assisted chemical vapor deposition for backside die marking and structures formed thereby Public/Granted day:2010-03-18
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