Method for forming silicon oxide film and for manufacturing capacitor and semiconductor device

Invention Grant

US07807537B2 Method for forming silicon oxide film and for manufacturing capacitor and semiconductor device 有权

Title translation: 用于形成氧化硅膜和用于制造电容器和半导体器件的方法

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Patent Title: Method for forming silicon oxide film and for manufacturing capacitor and semiconductor device
Patent Title (中): 用于形成氧化硅膜和用于制造电容器和半导体器件的方法
Application No.: US11686225

Application Date: 2007-03-14
Publication No.: US07807537B2

Publication Date: 2010-10-05
Inventor: Yoshiko Harada , Naotada Ogura
Applicant: Yoshiko Harada , Naotada Ogura
Applicant Address: JP Shizuoka-Ken
Assignee: Yamaha Corporation
Current Assignee: Yamaha Corporation
Current Assignee Address: JP Shizuoka-Ken
Agency: Dickstein Shapiro LLP
Priority: JP2006-070738 20060315
Main IPC: H01L21/8234
IPC: H01L21/8234

Method for forming silicon oxide film and for manufacturing capacitor and semiconductor device

Abstract:

After forming a silicon nitride film 14 on a silicon oxide film 12 covering one main surface of a semiconductor substrate 10 by a CVD method, argon ions Ar+ are doped to a part (where oxidation speed should be reduced) of the silicon nitride film 14 by an ion doping process using a resist layer as a mask in a condition of acceleration voltage at 100 keV and a dose amount of 5×1015 inos/cm2. Thereafter, by performing a thermal oxidation process to the silicon nitride film 14, a thin silicon oxide film 18a is formed in a non-ion doped part and a thick silicon oxide film 18b is formed in an ion doped part. This method for forming silicon oxide films can be applied to a method for manufacturing capacitors of a MOS type IC, etc. Moreover, a silicon oxynitride film can be used instead of the silicon nitride film.

Abstract(Chinese):

在通过CVD法覆盖半导体衬底10的一个主表面的氧化硅膜12上形成氮化硅膜14之后，将氮离子Ar +掺杂到氮化硅膜14的一部分（其中氧化速度应该降低）的部分在加速电压为100keV，剂量为5×1015inos / cm2的条件下使用抗蚀剂层作为掩模的离子掺杂工艺。此后，通过对氮化硅膜14进行热氧化处理，在非离子掺杂部分形成薄氧化硅膜18a，在离子掺杂部分形成厚的氧化硅膜18b。这种用于形成氧化硅膜的方法可以应用于制造MOS型IC等的电容器的方法。此外，可以使用氧氮化硅膜代替氮化硅膜。

Public/Granted literature

US20070218637A1 METHOD FOR FORMING SILICON OXIDE FILM AND FOR MANUFACTURING CAPACITOR AND SEMICONDUCTOR DEVICE Public/Granted day:2007-09-20

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺