Invention Grant
- Patent Title: Method of manufacturing semiconductor film and method of manufacturing photovoltaic element
- Patent Title (中): 制造半导体膜的方法和制造光电元件的方法
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Application No.: US12108120Application Date: 2008-04-23
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Publication No.: US07807495B2Publication Date: 2010-10-05
- Inventor: Akira Terakawa , Toshio Asaumi
- Applicant: Akira Terakawa , Toshio Asaumi
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Ditthavong, Mori & Steiner, P.C.
- Priority: JP2007-112486 20070423
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a semiconductor film capable of suppressing difficulty in temperature control of a catalytic wire is obtained. This method of manufacturing a semiconductor film includes steps of heating a catalytic wire to at least a prescribed temperature and forming a semiconductor film by introducing source gas for a semiconductor and decomposing the source gas with the heated catalytic wire after heating the catalytic wire to at least the prescribed temperature.
Public/Granted literature
- US20080261348A1 METHOD OF MANUFACTURING SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING PHOTOVOLTAIC ELEMENT Public/Granted day:2008-10-23
Information query
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