Invention Grant
US07807234B2 Plasma processing method, plasma processing apparatus, and computer recording medium
失效
等离子体处理方法，等离子体处理装置和计算机记录介质
- Patent Title: Plasma processing method, plasma processing apparatus, and computer recording medium
- Patent Title (中): 等离子体处理方法，等离子体处理装置和计算机记录介质
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Application No.: US11197554Application Date: 2005-08-05
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Publication No.: US07807234B2Publication Date: 2010-10-05
- Inventor: Junichi Kitagawa
- Applicant: Junichi Kitagawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-029530 20030206
- Main IPC: C23C16/511
- IPC: C23C16/511
Abstract:
According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.
Public/Granted literature
- US20050287725A1 Plasma processing method, plasma processing apparatus, and computer recording medium Public/Granted day:2005-12-29
Information query
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