Invention Grant
- Patent Title: High performance magnetic tunnel barriers with amorphous materials
- Patent Title (中): 具有无定形材料的高性能磁隧道屏障
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Application No.: US11829038Application Date: 2007-07-26
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Publication No.: US07807218B2Publication Date: 2010-10-05
- Inventor: Stuart Stephen Papworth Parkin
- Applicant: Stuart Stephen Papworth Parkin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Daniel E. Johnson
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel barrier. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous. Magnetic tunnel junctions formed from the amorphous magnetic layer, the tunnel barrier, and an additional ferromagnetic layer have tunneling magnetoresistance values of up to 200% or more.
Public/Granted literature
- US20100028530A1 High Performance Magnetic Tunnel Barriers with Amorphous Materials Public/Granted day:2010-02-04
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