A processing method for forming a first pattern on a substrate to which a resist is applied includes the steps of pressing an original having a second pattern that has a relief reverse to that of the first pattern, against the resist on the substrate, and irradiating light onto the resist via the original, wherein a size of a concave of the second pattern is greater than a size of a convex of the first pattern corresponding to the concave of the second pattern, and a size of a convex of the second pattern is smaller than a size of a concave of the first pattern corresponding to the convex of the second pattern.