Invention Grant
- Patent Title: Substrate temperature control in an ALD reactor
- Patent Title (中): ALD反应器中的基板温度控制
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Application No.: US10921604Application Date: 2004-08-18
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Publication No.: US07806983B2Publication Date: 2010-10-05
- Inventor: Tony P. Chiang , Karl F. Leeser , Jeffrey A. Brown , Jason E. Babcoke
- Applicant: Tony P. Chiang , Karl F. Leeser , Jeffrey A. Brown , Jason E. Babcoke
- Applicant Address: US CA San Jose
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patent Law Group LLP
- Agent Brian D. Ogonowsky
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00 ; C23C14/00
Abstract:
A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.
Public/Granted literature
- US20050016471A1 Substrate temperature control in an ALD reactor Public/Granted day:2005-01-27
Information query
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