Invention Grant
US07791940B2 Integrated circuit with switching unit for memory cell coupling, and method for producing an integrated circuit for memory cell coupling
有权
具有用于存储单元耦合的开关单元的集成电路以及用于产生用于存储器单元耦合的集成电路的方法
- Patent Title: Integrated circuit with switching unit for memory cell coupling, and method for producing an integrated circuit for memory cell coupling
- Patent Title (中): 具有用于存储单元耦合的开关单元的集成电路以及用于产生用于存储器单元耦合的集成电路的方法
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Application No.: US12248505Application Date: 2008-10-09
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Publication No.: US07791940B2Publication Date: 2010-09-07
- Inventor: Andreas Taeuber
- Applicant: Andreas Taeuber
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Priority: DE102007048306 20071009
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
An integrated circuit has a plurality of first memory cells, which are electrically coupled along a first line, and additionally has a plurality of second memory cells which are electrically coupled along a second line. The integrated circuit furthermore has a switching unit having a plurality of switching elements having in turn a first contact and a second contact. The first contact of a first switching element is coupled to the plurality of first memory cells, and the first contact of a second switching element is coupled to the plurality of second memory cells. In addition, the first contact of a third switching element is coupled to the second contact of the first switching element, and the first contact of a fourth switching element is coupled to the second contact of the second switching element.
Public/Granted literature
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