Invention Grant
- Patent Title: Optimized phase change write method
- Patent Title (中): 优化相变写入方式
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Application No.: US11963119Application Date: 2007-12-21
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Publication No.: US07791933B2Publication Date: 2010-09-07
- Inventor: Mark Lamorey , Thomas Happ
- Applicant: Mark Lamorey , Thomas Happ
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Michael J. LeStrange, Esq.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC), and a design structure including the IC embodied in a machine readable medium are disclosed. The system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.
Public/Granted literature
- US20090161416A1 OPTIMIZED PHASE CHANGE WRITE METHOD Public/Granted day:2009-06-25
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