Invention Grant
- Patent Title: Multi-layer embedded capacitance and resistance substrate core
- Patent Title (中): 多层嵌入式电容和电阻基板芯
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Application No.: US12283146Application Date: 2008-09-09
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Publication No.: US07791897B2Publication Date: 2010-09-07
- Inventor: Rabindra N. Das , John M. Lauffer , Irving Memis , Steven G. Rosser
- Applicant: Rabindra N. Das , John M. Lauffer , Irving Memis , Steven G. Rosser
- Applicant Address: US NY Endicott
- Assignee: Endicott Interconnect Technologies, Inc.
- Current Assignee: Endicott Interconnect Technologies, Inc.
- Current Assignee Address: US NY Endicott
- Agency: Hinman, Howard & Kattell
- Agent Mark Levy
- Main IPC: H05K1/16
- IPC: H05K1/16
Abstract:
A multi-layer imbedded capacitance and resistance substrate core. At least one layer of resistance material is provided. The layer of resistance material has a layer of electrically conductive material embedded therein. At least one layer of capacitance material of high dielectric constant is disposed on the layer of resistance material. Thru-holes are formed by laser.
Public/Granted literature
- US20100060381A1 Mulit-layer embedded capacitance and resistance substrate core Public/Granted day:2010-03-11
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