Invention Grant
- Patent Title: Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer
- Patent Title (中): 具有高铁浓度自由层和镁阻隔层氧化物的隧道磁阻传感器
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Application No.: US11645462Application Date: 2006-12-26
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Publication No.: US07791845B2Publication Date: 2010-09-07
- Inventor: Daniele Mauri , Alexander M. Zeltser
- Applicant: Daniele Mauri , Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Lorimer Labs
- Agent D'Arcy H. Lorimer
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11C11/00
Abstract:
An improved formulation for free layers in MTJ sensors is disclosed. Optimized results of the prior art suggest free layer iron concentrations less than 20 atomic % give the best performance. The present invention discloses improved TMR ratio, Hce, and λ performance for high free layer iron concentrations between about 70 and 91.5 atomic %, when compared to the prior art.
Public/Granted literature
- US20080151442A1 High iron free layer for magnetic tunnel junction sensors Public/Granted day:2008-06-26
Information query
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