Invention Grant
- Patent Title: Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction
- Patent Title (中): 具有具有正磁致伸缩性的磁稳定自由层的磁阻传感器
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Application No.: US11737701Application Date: 2007-04-19
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Publication No.: US07791844B2Publication Date: 2010-09-07
- Inventor: Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat , James L. Nix
- Applicant: Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat , James L. Nix
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.
Public/Granted literature
- US20070281079A1 MAGNETORESISTIVE SENSOR HAVING A MAGNETICALLY STABLE FREE LAYER WITH A POSITIVE MAGNETOSTRICTION Public/Granted day:2007-12-06
Information query
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