Invention Grant
- Patent Title: Method and system for FET-based amplifier circuits
- Patent Title (中): 基于FET的放大器电路的方法和系统
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Application No.: US12260925Application Date: 2008-10-29
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Publication No.: US07791410B2Publication Date: 2010-09-07
- Inventor: Boris Murmann , Jason C. Hu
- Applicant: Boris Murmann , Jason C. Hu
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: Crawford Maunu PLLC
- Main IPC: H03F1/02
- IPC: H03F1/02

Abstract:
Amplifier circuits and methods are implemented using a variety of different embodiments. According to one such embodiment, a method is implemented using a field-effect transistor (FET) having a gate node, a source node and a drain node. A first circuit state is implemented in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to a first voltage level. A second circuit state is implemented in which the drain node is connected to a voltage source, the source node is connected to a load, and while charge at the gate node is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the first voltage level.
Public/Granted literature
- US20090051436A1 METHOD AND SYSTEM FOR FET-BASED AMPLIFIER CIRCUITS Public/Granted day:2009-02-26
Information query
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