A level shift circuit includes a drive transistor, a first PMOS transistor, and first and second clamp transistors of PMOS type. The drive transistor, which drives the gate of the high-side NMOS transistor in a power semiconductor device, has a source-drain path coupled between a boot potential generated by a bootstrap circuit provided in the semiconductor device and a source potential of the high-side NMOS transistor. The first PMOS transistor has a source coupled to the boot potential, and a drain coupled to the gate of the drive transistor. The first clamp transistor has a gate coupled to the source potential of the high-side NMOS transistor, and a source coupled to the drain of the first PMOS transistor. The second clamp transistor has a gate coupled to the source potential of the high-side NMOS transistor, and a source coupled to the gate of the first PMOS transistor.