Invention Grant
- Patent Title: Voltage regulator for use in nonvolatile semiconductor memory
- Patent Title (中): 用于非易失性半导体存储器的稳压器
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Application No.: US11844508Application Date: 2007-08-24
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Publication No.: US07791320B2Publication Date: 2010-09-07
- Inventor: Sang-kug Park , Dae-Han Kim
- Applicant: Sang-kug Park , Dae-Han Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0133518 20061226
- Main IPC: G05F1/59
- IPC: G05F1/59
Abstract:
The invention relates to a voltage regulator for operation of a semiconductor memory device. In embodiments, the voltage regulator includes a standby regulator unit and an active regulating unit. Embodiments of the invention decouple the operation of the standby regulating unit and the active regulating unit of a voltage regulator so that both can operate simultaneously, for example during a read operation. In embodiments of the invention, the standby regulating unit includes a short pulse generator and a feedback loop to disable the standby regulating unit for a predetermined amount of time.
Public/Granted literature
- US20080150499A1 VOLTAGE REGULATOR FOR USE IN NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2008-06-26
Information query
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