Invention Grant
- Patent Title: Pass through via technology for use during the manufacture of a semiconductor device
- Patent Title (中): 通过半导体器件制造过程中使用的通孔技术
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Application No.: US12396583Application Date: 2009-03-03
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Publication No.: US07791207B2Publication Date: 2010-09-07
- Inventor: William M. Hiatt
- Applicant: William M. Hiatt
- Applicant Address: US ID Bosie
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Bosie
- Agent Michael E. Romani
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Via structures are described which pass through a semiconductor substrate assembly such as a semiconductor die or wafer and allows for two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer.
Public/Granted literature
- US20090194886A1 PASS THROUGH VIA TECHNOLOGY FOR USE DURING TEH MANUFACTURE OF A SEMICONDUCTOR DEVICE Public/Granted day:2009-08-06
Information query
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