Invention Grant
US07791207B2 Pass through via technology for use during the manufacture of a semiconductor device 有权
通过半导体器件制造过程中使用的通孔技术

  • Patent Title: Pass through via technology for use during the manufacture of a semiconductor device
  • Patent Title (中): 通过半导体器件制造过程中使用的通孔技术
  • Application No.: US12396583
    Application Date: 2009-03-03
  • Publication No.: US07791207B2
    Publication Date: 2010-09-07
  • Inventor: William M. Hiatt
  • Applicant: William M. Hiatt
  • Applicant Address: US ID Bosie
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Bosie
  • Agent Michael E. Romani
  • Main IPC: H01L23/48
  • IPC: H01L23/48
Pass through via technology for use during the manufacture of a semiconductor device
Abstract:
Via structures are described which pass through a semiconductor substrate assembly such as a semiconductor die or wafer and allows for two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer.
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