Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11051566Application Date: 2005-01-27
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Publication No.: US07791206B2Publication Date: 2010-09-07
- Inventor: Yukiharu Takeuchi , Hidenori Takayanagi
- Applicant: Yukiharu Takeuchi , Hidenori Takayanagi
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2004-022581 20040130
- Main IPC: H01L23/06
- IPC: H01L23/06

Abstract:
In a semiconductor device, via holes are formed around a chip buried in a package, and conductor layers are respectively formed to be connected to one end and another end of the conductor filled in the individual via hole. Portions (pad portions) of the conductor layers which correspond to the conductors are exposed from protective films, or external connection terminals are bonded to the pad portions. The chip is mounted with flip-chip technology so that at least some of electrode terminals thereof are electrically connected to the conductor layers.
Public/Granted literature
- US20050184377A1 Semiconductor device and method of manufacturing the same Public/Granted day:2005-08-25
Information query
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