Invention Grant
- Patent Title: Semiconductor device having oxidized metal film and manufacture method of the same
- Patent Title (中): 具有氧化金属膜的半导体器件及其制造方法
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Application No.: US12010371Application Date: 2008-01-24
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Publication No.: US07791202B2Publication Date: 2010-09-07
- Inventor: Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
- Applicant: Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2005-014453 20050121
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.
Public/Granted literature
- US20080122102A1 Semiconductor device having oxidized metal film and manufacture method of the same Public/Granted day:2008-05-29
Information query
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