Invention Grant
- Patent Title: Semiconductor memory device and method of controlling the same
- Patent Title (中): 半导体存储器件及其控制方法
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Application No.: US11905050Application Date: 2007-09-27
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Publication No.: US07791060B2Publication Date: 2010-09-07
- Inventor: Hideaki Aochi , Yoshiaki Fukuzumi
- Applicant: Hideaki Aochi , Yoshiaki Fukuzumi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-263308 20060927
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A semiconductor memory device comprising: first and second wirings arranged in a matrix; and a memory cell being provided at an intersecting point of the first and second wirings and including a resistance change element and an ion conductor element connected to each other in a cascade arrangement between the first and second wirings.
Public/Granted literature
- US20080089121A1 Semiconductor memory device and method of controlling the same Public/Granted day:2008-04-17
Information query
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