Invention Grant
US07791058B2 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
有权
增强的存储密度电阻可变存储器单元，阵列，包括其的器件和系统以及制造方法
- Patent Title: Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
- Patent Title (中): 增强的存储密度电阻可变存储器单元，阵列，包括其的器件和系统以及制造方法
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Application No.: US12491911Application Date: 2009-06-25
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Publication No.: US07791058B2Publication Date: 2010-09-07
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/00
Abstract:
A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.
Public/Granted literature
Information query
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