Invention Grant
- Patent Title: Ion implanting apparatus for forming ion beam shape
- Patent Title (中): 用于形成离子束形状的离子注入装置
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Application No.: US12219526Application Date: 2008-07-23
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Publication No.: US07791040B2Publication Date: 2010-09-07
- Inventor: Minoru Ikeda , Toshio Iida
- Applicant: Minoru Ikeda , Toshio Iida
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2007-214278 20070821
- Main IPC: G21K5/04
- IPC: G21K5/04

Abstract:
Aimed at providing an ion implantation apparatus elongated in period over which failure of a target work, due to deposition and release of ion species typically to and from the inner surface of a through-hole shaping a beam shape of ion beam, may be avoidable, reduced in frequency of exchange of an aperture component, and consequently improved in productivity, an aperture component shaping a beam shape has a taper opposed to the ion beam, in at least a part of inner surface of at least the through-hole, and has a thick thermal-sprayed film formed so as to cover the inner surface and therearound of the through-hole.
Public/Granted literature
- US20090050820A1 Ion implantation apparatus Public/Granted day:2009-02-26
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