Semiconductor device and method of manufacturing the same

Invention Grant

US07790613B2 Semiconductor device and method of manufacturing the same 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method of manufacturing the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US12021113

Application Date: 2008-01-28
Publication No.: US07790613B2

Publication Date: 2010-09-07
Inventor: Mitsuhiro Horikawa
Applicant: Mitsuhiro Horikawa
Applicant Address: JP Tokyo
Assignee: Elpida Memory, Inc.
Current Assignee: Elpida Memory, Inc.
Current Assignee Address: JP Tokyo
Agency: Sughrue Mion, PLLC
Priority: JP2007-020922 20070131
Main IPC: H01L21/469
IPC: H01L21/469 ; H01L21/31

Semiconductor device and method of manufacturing the same

Abstract:

A semiconductor device includes: a semiconductor substrate; a memory cell selection transistor that is formed on the semiconductor substrate and has a source and a drain; a contact plug; a polysilicon interlayer film that is formed above the memory cell selection transistor and has a cylinder-shaped through-hole; and a storage capacity part that is formed in the through-hole and is connected to the source and the drain of the memory cell selection transistor via the contact plug, wherein a boundary between a bottom and a side wall of the through-hole has a curved surface.

Abstract(Chinese):

半导体器件包括：半导体衬底; 存储单元选择晶体管，其形成在所述半导体基板上并具有源极和漏极; 接触塞形成在所述存储单元选择晶体管的上方并具有圆筒状的通孔的多晶硅层间膜; 以及存储电容部，其形成在所述通孔中并且经由所述接触插塞连接到所述存储单元选择晶体管的所述源极和漏极，其中，所述通孔的底部和侧壁之间的边界具有曲面。

Public/Granted literature

US20080210999A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-09-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理