Invention Grant
- Patent Title: Manufacturing method improving the reliability of a bump electrode
- Patent Title (中): 制造方法提高凸块电极的可靠性
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Application No.: US11428705Application Date: 2006-07-05
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Publication No.: US07790595B2Publication Date: 2010-09-07
- Inventor: Tatsuhiko Asakawa , Shuichi Tanaka , Hideo Imai
- Applicant: Tatsuhiko Asakawa , Shuichi Tanaka , Hideo Imai
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-196642 20050705
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method for manufacturing a semiconductor device comprises (a) forming a resin layer that includes at least a plurality of a first and a second resin parts, being separated from each other, over a semiconductor substrate having an electrode pad and a passivation film; (b) forming a resin projection in which the first and the second resin parts are integrated by curing the resin layer; and (c) forming a conductive layer that is being connected electrically to the electrode pad and extending over the resin projection, wherein in process (a), the second resin part is formed at least between the electrode pad and the first resin part at a width less than the first resin part.
Public/Granted literature
- US20070010045A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2007-01-11
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