Invention Grant
- Patent Title: Antiferromagnetic half-metallic semiconductor and manufacturing method therefor
- Patent Title (中): 反铁磁半金属半导体及其制造方法
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Application No.: US11573509Application Date: 2005-09-09
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Publication No.: US07790585B2Publication Date: 2010-09-07
- Inventor: Hisazumi Akai , Masako Ogura
- Applicant: Hisazumi Akai , Masako Ogura
- Applicant Address: JP Suita-shi
- Assignee: Osaka University
- Current Assignee: Osaka University
- Current Assignee Address: JP Suita-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2004-263479 20040910
- International Application: PCT/JP2005/017100 WO 20050909
- International Announcement: WO2006/028299 WO 20060316
- Main IPC: H01L21/04
- IPC: H01L21/04
Abstract:
An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.
Public/Granted literature
- US20090224340A1 ANTIFERROMAGNETIC HALF-METALLIC SEMICONDUCTOR AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-09-10
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