Invention Grant
- Patent Title: Metal-induced crystallization of amorphous silicon in thin film transistors
- Patent Title (中): 薄膜晶体管中非晶硅的金属诱导结晶
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Application No.: US11684447Application Date: 2007-03-09
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Publication No.: US07790580B2Publication Date: 2010-09-07
- Inventor: Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- Applicant: Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- Applicant Address: HK Hong Kong
- Assignee: Hong Kong University of Science and Technology
- Current Assignee: Hong Kong University of Science and Technology
- Current Assignee Address: HK Hong Kong
- Agency: Cooper & Dunham LLP
- Agent Robert D. Katz, Esq.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.
Public/Granted literature
- US20070212855A1 Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors Public/Granted day:2007-09-13
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