Invention Grant
- Patent Title: Crackstop structures and methods of making same
- Patent Title (中): 裂缝结构及其制作方法
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Application No.: US12175006Application Date: 2008-07-17
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Publication No.: US07790577B2Publication Date: 2010-09-07
- Inventor: Xiao Hu Liu , Chih-Chao Yang , Haining Sam Yang
- Applicant: Xiao Hu Liu , Chih-Chao Yang , Haining Sam Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Ian D. MacKinnon
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a set of wiring levels stacked from a first wiring level to a last wiring level; and a respective void in each wiring level of two or more wiring levels of the set wiring levels, each respective void extending in a continuous ring parallel and proximate to a perimeter of the integrated circuit chip, a void of a higher wiring level stacked directly over but not contacting a void of a lower wiring level, the respective voids forming a crack stop.
Public/Granted literature
- US20100012950A1 CRACKSTOP STRUCTURES AND METHODS OF MAKING SAME Public/Granted day:2010-01-21
Information query
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